ICT 300

The ICT 300, QCS's proprietary Implant Characterization Tool, measures the dynamic surface photo-charge signal which provides the high sensitivity required for effective process monitoring of advanced CMOS and Bipolar implant tolerances. The ICT 300 monitors dose, energy, and angle variations to help keep the implant process in control. QCS provides the expertise, commitment and support to help you customize a sensitivity curve for a particular application.

ICT 300 Capabilities:

• Annealed and as-implanted wafers - non destructive and non contact measurement technique in typically < 5 minutes
• Capable of monitoring all common specie implants (B, P, As, BF₂, Ar, In, H, Ge, Xe, etc.)
• Energy range - 500eV to 3MeV
• Dose range: 1e10 - 5e16/cm² (Specie dependent)
• Throughput: 12 wafers per hour (200mm)
• Throughput: 9 wafers per hour (300mm)
• Typical dose sensitivity:* 0.8 to 3.8
• Typical energy sensitivity:* 1.5

* Sensitivity = (% signal change) / (% implant process parameter change)